Photoresist for lithographic techniques, e.g. structuring silicon wafers, comprises a solution of organopolysiloxane with carbon side chains containing acid-labile groups attached to highly polar groups

摘要

A photoresist containing polymer, photo-acid former and solvent, in which the polymer chain has at least two parts, one based on alternating silicon and oxygen atoms and the other on carbon atoms, the latter containing acid-labile groups attached to highly polar groups so that the polymer is soluble in aqueous alkaline developers after cleavage of acid-labile groups.