Apparatus for depositing layers having atomic thickness on a substrate used in the semiconductor industry has a chamber wall arranged between two chamber regions to separate the chamber regions

摘要

Apparatus for depositing layers having atomic thickness on a substrate comprises a chamber with a first chamber region in which a first layer is deposited on a substrate, a second chamber region in which a second layer is deposited on the first layer and a transport system for transporting the substrate. The first and second chamber regions are separated by a chamber wall. Apparatus for depositing layers having atomic thickness on a substrate (5) comprises a chamber (10) with a first chamber region (15), into which a first process gas (20) is introduced to deposit a first layer (25) on the substrate, and a second chamber region (30), into which a second process gas (35) is introduced to deposit a second layer (40) on the first layer; and a transport system (45) to transport the substrates. A chamber wall (55) is arranged between the first chamber region and the second chamber region to separate the chamber regions. An Independent claim is also included for a process for depositing layers having atomic thickness on a substrate. Preferred Features: The chamber wall has a recess so that a substrate can pass through the chamber wall. A third chamber region (65) is arranged between the first chamber region and the second chamber region to separate the first and second chamber regions.