APPARATUS FOR DEPOSITING WITH A THICKNESS OF AN ATOMIC LAYER AT A HIGH SPEED, CAPABLE OF USING AN UPPER CHAMBER HAVING A MODULE FEEDING SEPARATION GAS AND A LOWER CHAMBER ON WHICH A SUBSTRATE IS PLACED

摘要

PURPOSE: An apparatus for depositing with a thickness of an atomic layer at a high speed is provided to implement a deposition process with rotating a lower chamber and an upper chamber, thereby remarkably improving productivity.;CONSTITUTION: An apparatus for depositing with a thickness of an atomic layer at a high speed includes a lower chamber (10), a chamber rotation rail, a first fixing frame (12), an upper chamber (20), and a second fixing frame (21). Substrates are placed on the ring-shaped lower chamber at equal distances, and the lower chamber is rotated by a driving unit. The chamber rotation rail guides the rotation of the lower chamber. The first fixing frame supports and fixes the chamber rotation rail. A first module and a second module are alternately installed at the upper chamber at a certain distance, and respectively feed and discharge a first reacting substance and a second reacting substance. The second fixing frame fixes the upper chamber.;COPYRIGHT KIPO 2013