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New bis-o-nitrophenol derivatives, with tert.-butoxycarbonyl protecting groups, used for production of poly-o-hydroxyamide and/or polybenzoxazole polymers for use in microelectronics, e.g. as dielectrics
New bis-o-nitrophenol derivatives, with tert.-butoxycarbonyl protecting groups, used for production of poly-o-hydroxyamide and/or polybenzoxazole polymers for use in microelectronics, e.g. as dielectrics
Bis-o-nitrophenol derivatives, where at least one phenolic hydroxyl group is optionally substituted with a tert.-butoxycarbonyl group, are new. Bis-o-nitrophenol derivatives (A), where at least one phenolic hydroxyl group is optionally substituted with a tert.-butoxycarbonyl group of formula (I), are new. -CO-O-CR3R4R5 (I) R3-R5 = H, F, -(CH2)nCH3 or -(CF2)nCF3, with the proviso that at least one group is not H; and n = 0-10 Independent claims are included for: (1) poly-o-hydroxyamides and/or polybenzoxazoles obtained from (A); (2) material based on compounds (A) and/or the above polymers for microelectronic components; and (3) microelectronic components containing this material.
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机译:新的双邻硝基硝基苯酚衍生物,其中至少一个酚羟基任选被叔丁氧羰基取代。新的双邻硝基苯酚衍生物(A),其中至少一个酚羟基任选地被式(I)的叔丁氧羰基取代。 -CO-O-CR 3 R 4 R 5(I)R 3 -R 5 = H,F,-(CH2)nCH3或-(CF2)nCF3,条件是至少一组不是H; n = 0-10,包括以下方面的独立权利要求:(1)从(A)获得的聚邻羟基酰胺和/或聚苯并恶唑; (2)基于化合物(A)和/或以上聚合物的微电子元件的材料; (3)含有这种材料的微电子元件。
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