首页> 外国专利> New bis-o-nitrophenol derivatives, with tert.-butoxycarbonyl protecting groups, used for production of poly-o-hydroxyamide and/or polybenzoxazole polymers for use in microelectronics, e.g. as dielectrics

New bis-o-nitrophenol derivatives, with tert.-butoxycarbonyl protecting groups, used for production of poly-o-hydroxyamide and/or polybenzoxazole polymers for use in microelectronics, e.g. as dielectrics

机译:具有叔丁氧羰基保护基的新的双-邻-硝基苯酚衍生物,用于生产用于微电子领域的聚-邻-羟基酰胺和/或聚苯并恶唑聚合物。作为电介质

摘要

Bis-o-nitrophenol derivatives, where at least one phenolic hydroxyl group is optionally substituted with a tert.-butoxycarbonyl group, are new. Bis-o-nitrophenol derivatives (A), where at least one phenolic hydroxyl group is optionally substituted with a tert.-butoxycarbonyl group of formula (I), are new. -CO-O-CR3R4R5 (I) R3-R5 = H, F, -(CH2)nCH3 or -(CF2)nCF3, with the proviso that at least one group is not H; and n = 0-10 Independent claims are included for: (1) poly-o-hydroxyamides and/or polybenzoxazoles obtained from (A); (2) material based on compounds (A) and/or the above polymers for microelectronic components; and (3) microelectronic components containing this material.
机译:新的双邻硝基硝基苯酚衍生物,其中至少一个酚羟基任选被叔丁氧羰基取代。新的双邻硝基苯酚衍生物(A),其中至少一个酚羟基任选地被式(I)的叔丁氧羰基取代。 -CO-O-CR 3 R 4 R 5(I)R 3 -R 5 = H,F,-(CH2)nCH3或-(CF2)nCF3,条件是至少一组不是H; n = 0-10,包括以下方面的独立权利要求:(1)从(A)获得的聚邻羟基酰胺和/或聚苯并恶唑; (2)基于化合物(A)和/或以上聚合物的微电子元件的材料; (3)含有这种材料的微电子元件。

著录项

  • 公开/公告号DE10145470A1

    专利类型

  • 公开/公告日2003-05-22

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001145470

  • 发明设计人 SEZI RECAI;

    申请日2001-09-14

  • 分类号C07C205/06;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:42

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号