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Measuring structure for determining positioning accuracy of semiconductor wafer or exposure mask has reference structure and associated protection structures

机译:用于确定半导体晶片或曝光掩模的定位精度的测量结构具有参考结构和相关的保护结构

摘要

The measuring structure (1) has a reference structure (2,2') positioned at or near the surface (6) of the semiconductor wafer or mask and at least 2 protection structures (3,3'',3''',4'',4''') at respective distances from the reference structure and positioned parallel or perpendicular to it. Each of the structures can be provided as a groove formed in the surface of the semiconductor wafer or mask, the protection structures having a width of less than the resolutiuon limit of the optical system used for determining the positioning accuracy.
机译:测量结构(1)具有位于半导体晶片或掩模的表面(6)或附近的参考结构(2,2')和至少2个保护结构(3,3'',3''',4 '',4''')距参考结构的相应距离并平行或垂直于参考结构。可以将每个结构提供为形成在半导体晶片或掩模的表面中的凹槽,该保护结构的宽度小于用于确定定位精度的光学系统的分辨率极限。

著录项

  • 公开/公告号DE10148021A1

    专利类型

  • 公开/公告日2003-04-30

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001148021

  • 发明设计人 SPULER BRUNO;HEINE ROLF;SCHEDEL THORSTEN;

    申请日2001-09-28

  • 分类号H01L23/544;H01L21/66;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:33

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