Semiconductor memory device has driver transistor pair for each memory module and coupling transistor for coupling adjacent memory row selection lines

摘要

The memory device (100) has at least one memory module and associated word decoder block and at least one driver transistor pair (101a,101b), coupled to the word decoder block at their gates (104) in a ring structure (RDC). The sources (102) of the driver transistor pair lie outside the ring structure and have a common diffusion zone, the drains lying within the ring structure and coupled to at least one memory row selection line (106a,106b), adjacent selection lines coupled via a coupling transistor (105) receiving the same gate signal as the driver transistor pair.