Production of a vertically profiled electrode on a semiconductor substrate comprises providing a lacquer formed body on the substrate, depositing a metal on the lacquer formed body, and removing a lacquer structure together with the metal

摘要

Production of a vertically profiled electrode on a semiconductor substrate comprises providing a lacquer formed body consisting of a first lacquer structure and a second lacquer structure on the substrate, depositing a metal on the lacquer formed body, and carrying out a lift-off process to remove the second lacquer structure together with the deposited metal. Production of a vertically profiled electrode (40) on a semiconductor substrate (20) comprises providing a lacquer formed body (34) consisting of a first lacquer structure (24) and a second lacquer structure (32) on the substrate, depositing a metal (38) on the lacquer formed body, and carrying out a lift-off process to remove the second lacquer structure together with the deposited metal. An Independent claim is also included for a semiconductor component produced by the above process.