Isolation method for semiconductor devices used in microelectronics comprises a first switch, a second switch and a screen consisting of metal screening element for screening impurity signals between the two switches

摘要

Semiconductor device comprises a first switch (3), a second switch (5) and a screen for screening impurity signals between the two switches. The screen comprises a screening element (7) made from a metal. An Independent claim is also included for a process for the production of the semiconductor device, comprising growing a silicon crystal in an inert protective atmosphere containing a carbon-containing gas, forming a substrate suitable for the production of semiconductor components, forming a recess in the substrate, filling the trench with an aluminum-containing metal filling, and producing a first switch and a second switch on different sides of the recess. Preferred Features: The screen element extends in the lateral direction and/or vertically. The screening element is formed as a grate.