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Semiconductor device has opening with bottom defined by bonding pad connected to interconnection layer made of aluminum alloy, is formed on insulating films and buffer coat film
Semiconductor device has opening with bottom defined by bonding pad connected to interconnection layer made of aluminum alloy, is formed on insulating films and buffer coat film
A multilayer interconnection structure has lower and upper interconnection layers (13,17,66,70) made of aluminum alloy and copper respectively. An opening (74) with bottom defined by a bonding pad (71) connected to the interconnection layer (17), is formed in the insulation films (63,67,72) and buffer coat film (73). A wire (75) is inserted in the opening and bonded to the bonding pad.
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