Light emitting device used as a light emitting diode comprises a substrate, a gallium nitride based layer formed on the substrate, an aluminum gallium nitride based layer and a light emitting layer

摘要

Light emitting device comprises: a substrate (10); a gallium nitride based layer (12) formed on the substrate; an aluminum gallium nitride based layer (14); and a light emitting layer (16). One surface of the gallium nitride based layer is non-planar relative to the aluminum gallium nitride based layer. An Independent claim is also included for a process for the production of the light emitting device. Preferred Features: The gallium nitride based layer is 0.2-0.5 mu m or 2 mu m or more thick. A second aluminum gallium nitride layer (20) is formed on the light emitting layer.