Power semiconducting component has Schottky contacts that each adopt the shape of a circle or a polygon whose corners are arranged on periphery of a circle

摘要

The device has an anode electrode formed on a first main surface of a semiconducting substrate with a first conductivity type, Schottky contacts formed so the anode electrode is selectively in contact with the substrate and a cathode region with a cathode electrode. Each Schottky contact is a circle or a polygon with corners on a circle. Straight lines joining the centers of adjacent circles or polygons form a triangular grid unit. The device has an anode electrode (10) formed on a first main surface of a semiconducting substrate with a first conductivity type, Schottky contacts (15,16) formed so the anode electrode is selectively in contact with the substrate and a cathode region with a cathode electrode (12). Each Schottky contact adopts the shape of a circle or a polygon whose corners are arranged on the circumference of a circle. Straight lines joining the centers of adjacent circles or polygons form a triangular grid unit.