首页> 外国专利> Fabrication of semiconductor layers for thin-film semiconductor components, by applying useful layer with semiconductor layers to carrier, applying auxiliary carrier remote from carrier by connecting layer, and stripping away the carrier

Fabrication of semiconductor layers for thin-film semiconductor components, by applying useful layer with semiconductor layers to carrier, applying auxiliary carrier remote from carrier by connecting layer, and stripping away the carrier

机译:通过将具有半导体层的有用层施加到载体上,通过连接层施加远离载体的辅助载体,并剥离载体,来制造用于薄膜半导体组件的半导体层

摘要

Semiconductor layers are fabricated by applying a useful layer containing semiconductor layer(s) to a carrier, applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer at a joining temperature, and mechanically stripping away the carrier. Fabrication of semiconductor layers involves applying a useful layer containing semiconductor layer(s) to a carrier (1), applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer (2) at a joining temperature, and mechanically stripping away the carrier at temperature greater than or equal to the joining temperature and less than a melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier (3) is stripped away from the carrier.
机译:通过将包含半导体层的有用层施加到载体上,将辅助载体施加到有用层的背离载体的一侧上,并在连接温度下将连接层设置在辅助载体和有用层之间来制造半导体层。 ,并机械剥离载体。半导体层的制造包括将包含半导体层的有用层施加到载体(1),将辅助载体施加到有用层的背离载体的一侧,并在辅助载体和有用层之间设置连接层( 2)在连接温度下,在大于或等于连接温度且小于连接层熔点的温度下机械剥离载体。有用层的至少一部分与辅助载体(3)一起从载体上剥离。

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