A method of forming a structure for a orientation mark with the use of standard process steps for the formation of transistors with a vertical gate

摘要

It is an alignment mark structure (22) for orienting a mask with previously formed of structural elements of a said circuit region is provided, for the case that an opaque material layer (88), the orientation mark structure (22) covers. The structural elements of the alignment mark structure (22) are placed in a aligning masks region (20) simultaneously with the formation of the structural elements for a switch region formed with transistors with a vertical gate. There are no additional process steps, which for the formation of the aligning marking structure (22) are added, since these, at the same time, is formed as structural elements are formed in the switch region. The resulting alignment mark structure (22) has stairs structure features (62), so that the stairs structure features (62) to remain visible when the opaque material layer (88), the orientation mark structure (22) covers.