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Method for isolating active zones in a semiconductor substrate by means of shallow, non-wide trenches
Method for isolating active zones in a semiconductor substrate by means of shallow, non-wide trenches
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机译:通过浅的非宽沟槽隔离半导体衬底中有源区的方法
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摘要
The semiconductor comprises substrate (1) with a central region (6) which is intended later to become an active region. The substrate is covered by two layers (7) containing an insulating material. This consists of two layers (8, 9) of oxide materials. The insulating material forms a boss (16) which projects above the plane of the major surface of the device, projecting less than 1000 Angstroms.
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