PROCEDURES FOR THE MANUFACTURE OF A DOUBLE FIELD EFFECT TRANSISTER, PROCEDURES FOR THE MANUFACTURING OF AN ACTIVE SUBSTANCE TREATY, AND Liquid CRYSTAL ANNEXES

摘要

To provide a TFT fabrication method capable of forming on a large-surface area substrate with uniform film thickness and at high deposition rate of film, while being a low-temperature process, a high-quality gate insulation film having good charge behavior by forming a silicon oxide film by a thin film transistor fabrication method for a thin film transistor having a channel region connected to a source region and a drain region, and a gate electrode confronting with the channel region through a gate insulation film, wherein in the formation process of said gate insulation film a plasma chemical vapor deposition is used under the condition that tetraethoxysilane is used as the feed gas to provide the silicon and the distance between electrodes for generating the plasma is about 15 mm or less. IMAGE