首页> 外国专利> Integrated circuit has metal oxide semiconductor transistors which are integrated in supply rail and below supply conductors, to short-circuit conductors for protection against electrostatic discharge and overvoltage

Integrated circuit has metal oxide semiconductor transistors which are integrated in supply rail and below supply conductors, to short-circuit conductors for protection against electrostatic discharge and overvoltage

机译:集成电路具有金属氧化物半导体晶体管,该金属氧化物半导体晶体管集成在供电轨中和供电导体下方,可短路导体以防止静电放电和过电压

摘要

The integrated circuit (20) includes a metal oxide semiconductor (MOS) transistors which are provided for short-circuiting the supply conductors (12,13) arranged in a supply rail (11). The MOS transistors are integrated in the supply rail, below the conductors. The control circuits (6) detect electrostatic discharge (ESD) and overvoltage between the supply conductors. An Independent claim is also included for method of integrating MOS transistors for short- circuiting the supply conductors.
机译:集成电路(20)包括金属氧化物半导体(MOS)晶体管,所述金属氧化物半导体(MOS)晶体管被设置用于使布置在供电轨(11)中的供电导体(12,13)短路。 MOS晶体管集成在电源线的导体下方。控制电路(6)检测供电导体之间的静电放电(ESD)和过电压。还包括独立的权利要求,其涉及用于集成MOS晶体管以使供应导体短路的方法。

著录项

  • 公开/公告号FR2831328A1

    专利类型

  • 公开/公告日2003-04-25

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS SA;

    申请/专利号FR20010013675

  • 发明设计人 MALHERBE ALEXANDRE;BLISSON FABRICE;

    申请日2001-10-23

  • 分类号H01L23/60;

  • 国家 FR

  • 入库时间 2022-08-21 23:37:54

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