首页> 外国专利> METHOD FOR MEASURING DAMAGE LAYER THICKNESS AND FLEXURAL STRENGTH OF SEMICONDUCTOR SUBSTRATE AND LAMINATOR USED IN MEASURING THEM

METHOD FOR MEASURING DAMAGE LAYER THICKNESS AND FLEXURAL STRENGTH OF SEMICONDUCTOR SUBSTRATE AND LAMINATOR USED IN MEASURING THEM

机译:用于测量其的半导体基体和层合体损伤层厚度和抗弯强度的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring the thickness of a damage layer occurring in the step of laminating a semiconductor substrate and to provide a method for measuring the flexural strength of the semiconductor substrate under the lamination conditions used.;SOLUTION: The measurement method uses a device that laminates a semiconductor substrate in the state fixed and suctioned by vacuum. In the step of laminating the semiconductor substrate, the thickness of the damage layer is determined from the thickness of the semiconductor substrate at the time when the semiconductor substrate is broken in the state in which it is not subjected to the vacuum suctioning action. The flexural strength of the semiconductor substrate under the lamination conditions used can be obtained from the thickness of the semiconductor substrate at the time when the substrate is broken in the step of lamination of the semiconductor substrate fixed in the state in which it is subjected to the vacuum suctioning action.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种测量在层压半导体衬底的步骤中发生的损伤层的厚度的方法,并提供一种在所使用的层压条件下测量半导体衬底的弯曲强度的方法。测量方法使用一种装置,该装置以真空固定并抽吸的状态层压半导体衬底。在层压半导体衬底的步骤中,根据在不经受真空抽吸作用的状态下破坏半导体衬底时的半导体衬底的厚度来确定损伤层的厚度。半导体基板在所使用的层压条件下的挠曲强度,可以通过在以对基板进行固定的状态下进行固定的半导体基板的层压工序中基板破裂时的半导体基板的厚度求出。真空抽吸作用;;版权所有:(C)2004,日本特许厅

著录项

  • 公开/公告号JP2004143000A

    专利类型

  • 公开/公告日2004-05-20

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20020310774

  • 发明设计人 RYU YOKU;

    申请日2002-10-25

  • 分类号C30B33/00;

  • 国家 JP

  • 入库时间 2022-08-21 23:34:37

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