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HIGH-PRECISION ANALOG CAPACITOR WITH LOW VOLTAGE COEFFICIENT AND LOW HYSTERESIS AND ITS INNOVATIVE CONFIGURATION METHOD
HIGH-PRECISION ANALOG CAPACITOR WITH LOW VOLTAGE COEFFICIENT AND LOW HYSTERESIS AND ITS INNOVATIVE CONFIGURATION METHOD
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机译:低电压系数,低迟滞的高精度模拟电容器及其创新配置方法
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摘要
PROBLEM TO BE SOLVED: To provide a method and equipment for forming an analog capacitor on a semiconductor substrate.;SOLUTION: This method includes a process where a field oxide is formed on a portion of a substrate, and a polysilicon layer is formed on the field oxide, then a silicide layer is formed on the layer. A first interlayer dielectric layer is formed on the substrate, and a capacitor masking pattern is formed. Using the capacitor masking pattern as a mask and the silicide layer as an etch stop, the first interlayer dielectric layer is etched to form a thin dielectric on the substrate. A contact masking pattern is formed on the substrate. Using the silicide layer and substrate as etch stops, second etching is performed on the thin dielectric. A metal layer is deposited on the substrate, then planarized. Thus, an analog capacitor is configured.;COPYRIGHT: (C)2004,JPO
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