POLYCRYSTALLINE THIN FILM, METHOD OF PRODUCING SAME, AND THIN FILM TRANSISTOR FREE OF DIRECTIONAL DEPENDENCE WITH RESPECT TO ACTIVE CHANNEL PRODUCED BY USING SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of controlling a conformation of polycrystalline silicon formed when a polycrystalline silicon thin film is produced by the SLS crystallization method and a polycrystalline silicone thin film made by the method, and also to provide a TFT having an excellent characteristics free from the dependence of the TFT characteristics on the direction of an active channel, by making use of the polycrystalline silicon thin film produced by the above method.;SOLUTION: A polycrystalline silicon thin film for a display device is featured in that adjoining primary crystal grain boundaries are not parallel and an area enclosed by primary crystal grain boundaries is larger than 1 μm², and also characterized by a step of crystallizing amorphous silicon using a laser beam, through the use of a mask having a mixed structure of a laser-transparent line-shaped pattern and a laser-opaque pattern.;COPYRIGHT: (C)2004,JPO&NCIPI