首页> 外国专利> HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA SOURCE, AND HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA DEVICE

HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA SOURCE, AND HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA DEVICE

机译:高频感应耦合等离子体源和高频感应耦合等离子体装置

摘要

PROBLEM TO BE SOLVED: To provide a high-frequency inductively-coupled plasma source capable of forming plasma having a large outer diameter while restraining a coil diameter.;SOLUTION: A projecting part 3 projecting into a plasma generation chamber 2 is installed on an end face of the generation chamber 2. An excitation coil 4 for forming an A.C. magnetic field is stored in a recessed part formed in the projecting part 3. Since the projecting part 3 is formed of an insulator, plasma P1 cannot intrude into the inside region of the projecting part 3, a ring-like plasma region is formed between the projecting part 3 and the generation chamber 2. Thereby, the plasma 1 having the plasma region larger than the outer diameter of the excitation coil 4 can be formed.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种高频感应耦合等离子体源,该等离子体源能够在限制线圈直径的同时形成具有大外径的等离子体。解决方案:端部安装有伸入等离子体产生室2的凸出部3。在突出部3上形成的凹部中收纳有用于形成交流磁场的励磁线圈4。该突出部3由绝缘体形成,因此等离子体P1不能侵入到内部的内部。在突出部3上,在突出部3与发电室2之间形成环状的等离子体区域。由此,能够形成等离子体区域的面积大于励磁线圈4的外径的等离子体1。日本特许厅(C)2004

著录项

  • 公开/公告号JP2004158272A

    专利类型

  • 公开/公告日2004-06-03

    原文格式PDF

  • 申请/专利权人 SHIMADZU CORP;

    申请/专利号JP20020322179

  • 发明设计人 SUZUKI MASAYASU;UEDA MASAHIRO;

    申请日2002-11-06

  • 分类号H01J27/16;B01J19/08;C23C14/46;C23C16/507;H01J37/08;H01J37/305;H01L21/3065;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 23:30:27

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