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Method of manufacturing a field emission electron source array, field emission electron source array, and the manufacturing equipment

机译:场发射电子源阵列的制造方法,场发射电子源阵列和制造设备

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a field-emission-type electron- source array suitable for a thin-type display, a field-emission-type electron-source array and its manufacturing device, and a separation and purification method of carbon nanotube. SOLUTION: A conductive substrate 26, an conductive material layer 25 containing at least carbon nanotubes, an insulation substrate 23 having plural minute routes passing through the inside and outside, and an conductive substrate 21 having an insulation film 22 on the surface are laminated. By applying optimal alternative voltage between the conductive substrate 21 and the conductive substrate 26, qualified carbon nanotubes suitable to a field-emission-type electron source move into the minute routes passing through the inside and outside of the insulation substrate 23, while repeating minute expansion and contraction. The minute routes are filled with carbon nanotubes, and an oriented insulation substrate 23 is produced.
机译:解决的问题:提供适用于薄型显示器的场致发射型电子源阵列的制造方法,场致发射型电子源阵列及其制造装置以及分离和纯化方法碳纳米管。解决方案:层压导电基板26,至少包含碳纳米管的导电材料层25,具有从内部和外部穿过的多个微小路径的绝缘基板23和在表面具有绝缘膜22的导电基板21。通过在导电基板21和导电基板26之间施加最佳的交流电压,适合于场发射型电子源的合格的碳纳米管移动到穿过绝缘基板23的内部和外部的微小路径,同时重复微小的膨胀。和收缩。微小的路径填充有碳纳米管,并且产生了取向的绝缘基板23。

著录项

  • 公开/公告号JP3474142B2

    专利类型

  • 公开/公告日2003-12-08

    原文格式PDF

  • 申请/专利权人 シャープ株式会社;

    申请/专利号JP20000047762

  • 发明设计人 丸尾 祐二;浦山 雅夫;

    申请日2000-02-24

  • 分类号H01J9/02;G09F9/30;H01J1/304;

  • 国家 JP

  • 入库时间 2022-08-21 23:29:51

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