MOCVD SYSTEM OF Ti BASED BARRIER METAL THIN FILM USING TETRAX (METHYL ETHYL AMINO) TITANIUM ALONG WITH OCTANE

摘要

PROBLEM TO BE SOLVED: To provide an MOCVD system of a Ti based barrier metal thin film using tetrax (methyl ethyl amino) titanium along with octane.;SOLUTION: The process for forming a titanium based barrier metal layer comprises a step for preparing a substrate, a step for forming an IC element on the substrate, a step for forming a titanium based barrier metal precursor using a solution of about 5 vol% of tetrax (methyl ethyl amino) titanium (TMEAT) and about 95 vol% of octane, and a step for depositing a titanium based barrier layer on the substrate by MOCVD.;COPYRIGHT: (C)2005,JPO&NCIPI