首页> 外国专利> SCHMIDT TRIGGER CIRCUIT, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SCHMIDT TRIGGER CIRCUIT

SCHMIDT TRIGGER CIRCUIT, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SCHMIDT TRIGGER CIRCUIT

机译:施密特触发器电路,半导体装置及制造施密特触发器电路的方法

摘要

PROBLEM TO BE SOLVED: To provide a Schmidt trigger circuit with a simple configuration, which reduces power consumption and easily adjusts hysteresis characteristics.;SOLUTION: The Schmidt trigger circuit includes: a first PMOS transistor 10 connected in series between a power supply voltage and a reference potential; second PMOS transistor 20; second NMOS transistor 30; first NMOS transistor 40; inverter circuit 70; third PMOS transistor 50 connected in parallel to the transistor 10 and having a gate connected to an output terminal; and third NMOS transistor 60 connected in parallel to the transistor 40 and having a gate connected to an output terminal. A gate of the transistor 10 is connected to the reference potential, a gate of the transistor 40 is connected to the power supply voltage, and gates of the transistors 20 and 30 are commonly connected to the input terminal.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种具有简单配置的施密特触发电路,该电路可降低功耗并易于调节磁滞特性。解决方案:施密特触发电路包括:第一PMOS晶体管10串联连接在电源电压和输出之间。参考电位第二PMOS晶体管20;第二NMOS晶体管30;第一NMOS晶体管40;反相器电路70;第三PMOS晶体管50与晶体管10并联连接,并且其栅极连接到输出端子。第三NMOS晶体管60并联连接到晶体管40,并且其栅极连接到输出端子。晶体管10的栅极连接到参考电位,晶体管40的栅极连接到电源电压,并且晶体管20和30的栅极共同连接到输入端子。版权所有:(C)2005 ,JPO&NCIPI

著录项

  • 公开/公告号JP2004282349A

    专利类型

  • 公开/公告日2004-10-07

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20030070089

  • 发明设计人 NAKAJIMA KIMITOKU;

    申请日2003-03-14

  • 分类号H03K3/353;H03K5/08;

  • 国家 JP

  • 入库时间 2022-08-21 23:29:37

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