Thin film type emitter and thin film type emitter matrix and those production manners and thin film type emitter matrix display device

摘要

PROBLEM TO BE SOLVED: To provide a thin film electron source having good electron emission efficiency by covering an upper electrode bus line layer with an upper electrode layer to form a laminated film for the portion other than an electron emission section. SOLUTION: A stripe-like lower electrode 11 made of an Al film having the thickness of about 300nm is formed on an insulating substrate 10 (made of glass or the like), and the portion other than its electron emission section 11a is anodized to form a protective insulating film 14 having the thickness of about 68nm. An upper electrode bus line layer is constituted of a lower layer 15-1 (thickness of about 30nm) made of Mo or the like and an upper layer 15-2 (thickness of about 100nm) made of Au or the like. An window is opened at the upper section of the electron emission section 11a to form a tunnel insulating layer 12a having the thickness of about 5.5nm, then an upper electrode layer 13 having an electrode section 13a constituted of a lower layer 13-1 (thickness of about 1nm) made of Ir, an intermediate layer 13-2 (thickness of about 2nm) made of Pt, and an upper layer 13-3 (thickness of about 3nm) made of Au is formed on the whole face of the substrate 10, and a thin film electron source is manufactured.