ELIMINATION METHOD OF MASK LAMINATE, AND FORMATION AND ELIMINATION METHOD OF MASK LAMINATE

摘要

PROBLEM TO BE SOLVED: To provide an elimination method of a mask laminate wherein digging of a layer to be worked can be restrained when an once formed mask laminate is eliminated, and to provide a formation and elimination method of the mask laminate.;SOLUTION: An aperture C is formed on a lower resist film 3 by using an intermediate layer 4 whose etching tolerance is almost equal to that of a film 2 to be treated which is composed of silicon oxide or the like, as an etching mask, and the mask laminate having the intermediate layer 4 and the lower resist film 3 is formed. After that, when a pattern is determined to be imperfect and the mask laminate is eliminated without working the film 2 to be worked, a protective resist film 6 covering the film 2 which is exposed on the aperture C of the mask laminate is formed, the intermediate layer 4 on the lower resist film 3 is eliminated, and the lower resist film 3 and the protective resist film 6 are eliminated.;COPYRIGHT: (C)2004,JPO