HIGHLY EFFICIENT SEMICONDUCTOR LASER MANUFACTURING SYSTEM AND METHOD USING PRECURSOR HAVING DIRECT BONDING BETWEEN GROUP III ATOM AND NITROGEN ATOM

摘要

PROBLEM TO BE SOLVED: To provide an efficient semiconductor laser manufacturing system and method that emits light in a range of 1.2 to 1.6μm.;SOLUTION: This is to disclose a system for manufacturing light emitting devices 102 and 152. Such a system includes a growth chamber 132 and at least one nitrogen precursor 138 introduced into the growth chamber. The nitrogen precursor 138 has a direct bonding of at least one group III atom and at least one nitrogen atom. Further, the nitrogen precursor 138 is used to form layers 111, 113, and 115 that compose part of active regions 114 and 164 of the light emitting device 102. The layers include indium, gallium, arsenic and nitrogen, and light with a wavelength range of about 1.2 to 1.6μm is emitted by the active regions 114 and 164. A manufacturing method for semiconductor structures 102 and 152 is also disclosed.;COPYRIGHT: (C)2004,JPO