METHOD AND SYSTEM FOR PROVIDING OPTICAL PROXIMITY FEATURE TO RETICLE PATTERN FOR PHOTOLITHOGRAPHY OF DEEP SUB-WAVELENGTH

摘要

PPROBLEM TO BE SOLVED: To form a mask design which can print both of isolated features and features of dense intervals by an arbitrary exposure method without impairing resolution. PSOLUTION: The method for forming the mask design arranged with the optical proximity correction features including a step of obtaining a desired target pattern having the features to be imaged on a substrate, a step which is a step of determining an interference map based on the target pattern and which determines interference regions intensifying each other and interference regions weakening each other between at least one of the features imaged with the intermediate map and a visual field region adjacent to the at least one feature, and a step of arranging assist features to the mask design based on the interference regions intensifying each other and the interference region weakening each other is disclosed. PCOPYRIGHT: (C)2004,JPO&NCIPI