Production method of on-chip device and the minute machining structure which use deeply the groove trench etching method and same etching method to in the baseplate

摘要

Etching method of the trench to in the baseplate to which precise control of undercut of cross direction uses possible dry plasma etching method. Regarding this method, at least 1 on-chip devices or minute machining structure are formed optionally in the silicon substrate surface, and the aforementioned surface is covered at masking layer. Following next, for etching the baseplate which is done, trench pattern is drawn in masking layer, or is copied to the said layer. Top of the trench anisotropy is etched in the baseplate. Next the trench semi- anisotropic etching and isotropy is etched in the baseplate. When the trench in the baseplate is etched in lengthwise, by modifying the execution time of isotropy etching, control of undercut of cross direction is achieved simultaneously.