首页> 外国专利> COPOLYMER FILM, ITS FORMING METHOD, SEMICONDUCTOR DEVICE USING THE COPOLYMER FILM, AND POLYMER-FILM GROWING APPARATUS

COPOLYMER FILM, ITS FORMING METHOD, SEMICONDUCTOR DEVICE USING THE COPOLYMER FILM, AND POLYMER-FILM GROWING APPARATUS

机译:共聚物膜,其形成方法,使用该共聚物膜的半导体器件以及聚合物膜生长装置

摘要

PROBLEM TO BE SOLVED: To provide an organic polymer film having a low dielectric constant and excellent adhesion, and a semiconductor device having a multilayer wiring structure using the same.;SOLUTION: A mixed gas containing a gas of a first organic monomer having at least two or more of a cyclobutene structure and a gas of a second organic monomer which is an alicyclic hydrocarbon having at least two or more of a double bond, is sprayed, in a reaction chamber kept under reduced pressure, on a surface of a substrate that is placed in the reaction chamber and is heated, to grow a copolymer film by carrying out a polymerization reaction between the first organic monomer molecules and the second organic monomer molecules on the substrate surface.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供具有低介电常数和优异的粘附性的有机聚合物膜,以及具有使用该有机聚合物膜的多层布线结构的半导体器件。解决方案:包含至少具有第一有机单体的气体的混合气体在保持减压的反应室中,将两种或更多种环丁烯结构和第二有机单体的气体喷涂在保持减压的反应室中,所述第二有机单体是具有至少两个或更多个双键的脂环烃。将其放置在反应室中并加热,以通过在基板表面上的第一有机单体分子和第二有机单体分子之间进行聚合反应来生长共聚物膜。;版权所有:(C)2004,JPO

著录项

  • 公开/公告号JP2004064023A

    专利类型

  • 公开/公告日2004-02-26

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20020223960

  • 发明设计人 HAYASHI YOSHIHIRO;

    申请日2002-07-31

  • 分类号H01L21/312;C08F2/00;H01L21/31;H01L21/768;

  • 国家 JP

  • 入库时间 2022-08-21 23:28:06

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