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Thin film thermocouple integration die thermoelectric conversion device

机译:薄膜热电偶一体化模具热电转换装置

摘要

PROBLEM TO BE SOLVED: To obtain high-thermoelectric conversion efficiency and provide a low-cost integrated thin film thermocouple thermoelectric conversion device in a form that whatever the kinds of a thin film material are, films can be formed, heat is absorbed in both surfaces of a flat plate structure and heat is dissipated from both surfaces of the flat plate structure.;SOLUTION: An integrated thin film thermocouple thermoelectric conversion device is constituted on a structure that thin film thermocouples 22 formed by stacking P-type and N-type thermoelectric semiconductor thin films 27 and 28 via each electrical bonding layer 29 between the films 27 and 28 on one end part of a substrate 23 and via each insulating layer 31 between the films 27 and 28 on the rest of the substrate 23 are arranged and formed on the substrate 23. Each thin film thermocouple 22 are electrically series-connected with each other through conductors 32. Projected parts 35 and 36 provided on a top plate 24 and a base plate 25, both consisting of a heat conductor, are brought into contact with the parts, on which the layers 29 are located, in the thermocouples 22 and the conductors 32 on the opposite side to the parts respectively.;COPYRIGHT: (C)2003,JPO
机译:要解决的问题:为了获得高的热电转换效率并提供一种低成本的集成薄膜热电偶热电转换装置,其形式为无论何种薄膜材料,都可以形成膜,并且在两个表面都吸收热量平板结构的两个表面都散发热量。;解决方案:集成的薄膜热电偶热电转换装置构造在通过堆叠P型和N型热电偶而形成的薄膜热电偶22的结构上在基板23的一个端部上经由膜27和28之间的每个电接合层29并且在基板23的其余部分上经由膜27和28之间的每个绝缘层31布置并形成半导体薄膜27和28。每个薄膜热电偶22通过导体32彼此电串联。设置在顶板2上的突出部分35和36。如图4所示,在热电偶22和位于与零件相反侧的导体32中,使均由热导体构成的基板25与层29所位于的零件接触。日本特许厅(C)2003

著录项

  • 公开/公告号JP3554861B2

    专利类型

  • 公开/公告日2004-08-18

    原文格式PDF

  • 申请/专利权人 日本航空電子工業株式会社;

    申请/专利号JP20010138442

  • 发明设计人 鈴木 晃子;

    申请日2001-05-09

  • 分类号H01L35/32;H01L35/08;H01L35/14;H01L35/34;H02N11/00;

  • 国家 JP

  • 入库时间 2022-08-21 23:26:50

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