Strongly it has with electric field which consists of the porous semiconductor layer which inspection method of field emission type

摘要

PROBLEM TO BE SOLVED: To provide a high performance field emission electron source and a method and a device for simply deciding the quality of the field emission electron source. SOLUTION: Electrons injected into an intense electric field drift layer 6 are accelerated and drifted without colliding with silicon microcrystals 63 by the electric field applied to silicon oxide films 64 and are emitted through a surface electrode 7. Performance of photoluminescence measurement by light excitation of the intense electric field drift layer 6 detects peaks of emission from the silicon microcrystals 63. In a defective article with small emission current, peaks of emission from the silicon microcrystals 63 are not detected.