(Ge and Si) the Nx antireflection film and from the foundation film, at the time of the pattern formation

摘要

PROBLEM TO BE SOLVED: To simplify a process by controlling the water solubility of a GeNx reflection prevention film itself, and at the same time provide a reflection prevention film where water solubility is surely controlled, and a pattern formation method using the film. ;SOLUTION: A reflection prevention film is made of GeNx that is used for preventing light reflected from a ground film 54 and is applied to a photo resist film 58. In this case, a reflection prevention film made of GeNx further contains Si and the film is made of (Ge, Si)Nx. A reflection prevention film 56 is formed by the RF sputtering method in an atmosphere where argon gas and a nitrogen gas are mixed using a multi target.;COPYRIGHT: (C)1998,JPO