Chemical analysis of the defect which uses electronic appearance spectroscopy

摘要

The semiconductor wafer or the other baseplates (12) the surface particulate which can exist on (22) or the technology which measures the chemical composition of other small features. The particulate is irradiated the focus incident electron beam of variable energy (92) with. The x-ray or electronic radiation from the said particulate (94), in order to detect the increase of the output which indicates the ionization threshold value of the substance in the particulate it is watched. As for incident beam energy, in order to measure the kind which exists in the particulate are threshold value and the correlation which are detected.