Characterization and quantification of the chemically introduced defects in Single-Walled Carbon Nanotubes (SWCNTs) is important since their presence can strongly affect the electrical, mechanical and electronic properties of this novel material. Raman spectroscopy, in particular, the ratio of D-band over G-band (Id/Ig) of SWCNTs has been widely used as a practical method for this purpose. In this paper, on the basis of the simultaneous Raman scattering and photoluminescence spectroscopy, we developed a new method for characterization and quantification of the chemically introduced defects in SWCNTs. This method relies on the fact that photoluminescence efficiency of SWCNTs can be depressed or quenched by the side-wall defects. For comparison, the new method and the conventional Id/Ig one were applied for characterizing the diazonium salt, 2,4-dichlorobenzenediazonium 1,5-naphthalenedisulfonate, functionalized as-grow SWCNTs with varied defect densities. It was demonstrated that, the Id/Ig approach and the new method are complementary to each other. The former method is more appropriate for quantifying the functionalized SWCNTs with relatively high defect density; and the latter method works best for the SWCNTs with relatively low defect density.
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