Are superior in the oxidation resistance the graphite - silicon carbide complex and its production manner

摘要

PURPOSE: To ensure denseness and to improve oxidation and thermal shock resistance by converting the surface of a graphite compact into SiC, allowing molten silicon to penetrate into the compact and bringing them into a reaction. ;CONSTITUTION: A graphite compact as a base material is kept in contact with high purity quartz powder at 1,900-2,500K for 5-20min in an inert atmosphere and gaseous SiO₂ generated by the contact is allowed to react with the graphite compact to form an SiC layer having about 1mm thickness on the surface of the compact. The compact is then brought into contact with 100-500 pts.wt. metallic silicon per 100 pts.wt. of the compact and the metallic silicon is melted and allowed to penetrate into the compact by heating to 1,750-2,500K under a reduced pressure of 0.01-1.3KPa. They are brought into a reaction and graphite and SiC are allowed to exist in a mixed state.;COPYRIGHT: (C)1994,JPO&Japio