In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor

摘要

A process for cleaning the silicon surface of a semiconductor device material layer. The surface undergoes a pre-clean process followed by exposure to a nitrogen-containing gas. A polysilicon layer is formed on the surface in the same chamber and at about the same temperature as the cleaning and nitrogen exposing steps.