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Silicon controlled rectifier for sige process, manufacturing method thereof and integrated circuit including the same
Silicon controlled rectifier for sige process, manufacturing method thereof and integrated circuit including the same
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机译:用于sige工艺的可控硅整流器,其制造方法以及包括该可控硅整流器的集成电路
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摘要
A silicon controlled rectifier for SiGe process. The silicon controlled rectifier comprises a substrate, a buried layer of a first conductivity type in the substrate, a well of the first conductivity type in the substrate and above the buried layer, a doped region of a second conductivity type in the well, a first conducting layer of the second conductivity type on the substrate, and a second conducting layer of the first conductivity type on the first conducting layer.
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