EUV mask which facilitates electro-static chucking

摘要

A lithography mask or reticle and method of making the same is disclosed wherein the fidelity of pattern transfers is enhanced by way of a reduction in the opportunity for contaminating particles to become wedged between the mask and a chuck upon which the mask may rest during semiconductor processing via electrostatic chucking, and also by facilitating heat dissipation within the mask via thermal conductance to mitigate warping of the mask. One or more thermally conductive pads formed within one or more layers applied to the mask facilitate the thermal conductance, and spaces or apertures formed within the layers reduce the potential for particle contamination.