首页> 外国专利> Broadly tunable distributed bragg reflector structure processing

Broadly tunable distributed bragg reflector structure processing

机译:广泛可调的分布式布拉格反射镜结构处理

摘要

A process for creating a broadly tunable Distributed Bragg Reflector (DBR) with a reduced recombination rate. According to the current invention, this may be achieved by creating electron confinement regions and hole confinement regions in the waveguide of the DBR. Preferably, this is achieved by engineering the band gaps of the DBR waveguide and cladding materials. Preferably, the materials selected for use in the DBR may be lattice matched. Alternately, two or more thin electron confinement regions and two or more thin hole confinement regions may be created to take advantage of strain compensation in thinner layers thereby broadening the choices of materials appropriate for use in creating a broadly tunable DBR. Alternately, graded materials and/or graded interfaces may be created according to alternate processes according to the current invention to provide effective electron and/or hole confinement regions in various DBR designs.
机译:一种用于以较低的重组率创建可广泛调谐的分布式布拉格反射器(DBR)的过程。根据本发明,这可以通过在DBR的波导中形成电子限制区域和空穴限制区域来实现。优选地,这是通过设计DBR波导和包层材料的带隙来实现的。优选地,选择用于DBR中的材料可以是晶格匹配的。可替代地,可以创建两个或更多个薄的电子限制区域和两个或更多个薄的空穴限制区域,以利用较薄层中的应变补偿,从而拓宽了适用于创建可广泛调谐的DBR的材料的选择。替代地,可以根据根据本发明的替代方法来创建渐变材料和/或渐变界面,以在各种DBR设计中提供有效的电子和/或空穴限制区域。

著录项

  • 公开/公告号US6806114B1

    专利类型

  • 公开/公告日2004-10-19

    原文格式PDF

  • 申请/专利权人 NOVA CRYSTALS INC.;

    申请/专利号US20010039526

  • 发明设计人 YU-HWA LO;

    申请日2001-11-07

  • 分类号H01L210/00;H01S50/00;

  • 国家 US

  • 入库时间 2022-08-21 23:19:48

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