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Method to fill deep trench structures with void-free polysilicon or silicon
Method to fill deep trench structures with void-free polysilicon or silicon
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机译:用无空隙的多晶硅或硅填充深沟槽结构的方法
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摘要
The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be healed by exposing the voids and growing epitaxial silicon.
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