首页> 外国专利> Electron beam exposure method using variable backward scattering coefficient and computer-readable recording medium having thereof

Electron beam exposure method using variable backward scattering coefficient and computer-readable recording medium having thereof

机译:使用可变后向散射系数的电子束曝光方法及具有该方法的计算机可读记录介质

摘要

An electron beam exposure method is disclosed. First, An exposure region is divided into a plurality of grating regions. A pattern density is obtained for one of the plurality of grating regions. A backward scattering coefficient is determined in accordance with the pattern density for the one of the plurality of grating regions. An exposure dose amount is calculated from the backward scattering coefficient. The one of the plurality of grating regions is exposed with the calculated exposure dose amount. The backward scattering coefficient is provided with a variable function proportional to the pattern density. The backward scattering coefficient &eegr; is provided with a variable value depending on the pattern density and location of the one of the plurality of grating regions.
机译:公开了一种电子束曝光方法。首先,将曝光区域划分为多个光栅区域。对于多个光栅区域之一获得图案密度。根据多个光栅区域之一的图案密度来确定后向散射系数。根据后向散射系数计算曝光剂量。用计算出的曝光剂量对多个光栅区域之一进行曝光。向后散射系数具有与图案密度成比例的可变函数。后向散射系数&eegr;取决于多个光栅区域之一的图案密度和位置,为λ1提供可变值。

著录项

  • 公开/公告号US6783905B2

    专利类型

  • 公开/公告日2004-08-31

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US20020192066

  • 发明设计人 SEUNG-HUNE YANG;

    申请日2002-07-10

  • 分类号G03C50/00;G03F90/00;

  • 国家 US

  • 入库时间 2022-08-21 23:18:28

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