Bipolar junction transistor with reduced parasitic bipolar conduction

摘要

A bipolar transistor includes an auxiliary diffusion region formed in the base region having a conductivity type opposite to the base region and being electrically coupled to the base region. Alternately, the auxiliary diffusion region can be formed in the collector region where the auxiliary diffusion region has a conductivity type opposite to the collector region and is electrically coupled to the collector region. The auxiliary diffusion region forms a secondary parasitic transistor in the bipolar transistor having the effect of suppressing parasitic bipolar conduction caused by a primary parasitic bipolar device associated with the bipolar transistor.