A semiconductor laser operating in the mid-infrared region is described. In one particular embodiment, the semiconductor laser is provided having first and second cladding layers consisting essentially of GaSb that surround an active core, wherein the index of refraction of the first and second cladding layers is less than but close to the index of refraction of active core. The semiconductor laser in accordance with this invention has a low divergence angle with a high power efficiency. In an alternate embodiment, the semiconductor laser is provided having first and second cladding layers consisting essentially of AlxGa1-xAsySb1-y that surround the active core with an aluminum mole fraction between 0 and 25 percent. The index of refraction of the first and second cladding layers consisting essentially of AlxGa1-xAsySb1-y can be adjusted to match a variety of types of active cores and to provide a pre-determined divergence.
展开▼
机译：描述了在中红外区域中操作的半导体激光器。在一个特定实施例中，提供具有基本上由GaSb组成的第一和第二包层的半导体激光器，该第一和第二包层围绕有源芯，其中第一和第二包层的折射率小于但接近于有源层的折射率。核心。根据本发明的半导体激光器具有低发散角和高功率效率。在替代实施例中，提供具有第一和第二包层的半导体激光器，该第一和第二包层基本上由Al x Ga 1-x As y Sb < Sub> 1-y 包围着活性核，铝的摩尔分数在0％到25％之间。第一和第二包层的折射率主要由Al x Ga 1-x As y Sb 1-y组成可以进行调整以匹配各种类型的有源核心，并提供预定的发散度。
展开▼
