Method of integrating the fabrication process for integrated circuits and MEM devices

摘要

A method of forming a MEM device with an integrated circuit that includes providing a semiconductor substrate including a first region and a second region, forming an integrated circuit device on the first region, forming a first insulating layer on the semiconductor substrate, etching the first insulating layer to form a first dielectric layer on the first region and a second dielectric layer on the second region spaced apart from the first dielectric layer, forming a second insulating layer over the semiconductor substrate, the first dielectric layer and the second dielectric layer, etching the second insulating layer to expose the first dielectric layer, forming a third insulating layer over the semiconductor substrate, the second insulatng layer and the first dielectric layer, etching the third insulating layer to form a plurality of vias, and forming a metal layer over the semiconductor substrate to fill the vias.