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Magnetron sputtering source with improved target utilization and deposition rate
Magnetron sputtering source with improved target utilization and deposition rate
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机译:磁控溅射源具有更高的靶材利用率和沉积速率
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摘要
A magnetron sputtering cathode (21) having a simplified design provides excellent target (56) utilization. The magnet design contains three or four magnet sets (50, 52, 54). These magnets (50, 5254) are behind a heat shield capable of removing about 500 watts per square unit, such as inches. All the magnet sets (50, 52, 54) have magnetic orientations substantially perpendicular to the magnet base plate. The magnetic orientation of the center magnet (50) is north up; the second magnet array is south up (52); the third magnet set is south up (54); and the fourth magnet set, it used, is north up. The magnet arrays are easier to assemble and repair and produce a target utilization of at least 30 percent and preferably 40 percent or higher.
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