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Magnetron sputtering source with improved target utilization and deposition rate

机译:磁控溅射源具有更高的靶材利用率和沉积速率

摘要

A magnetron sputtering cathode (21) having a simplified design provides excellent target (56) utilization. The magnet design contains three or four magnet sets (50, 52, 54). These magnets (50, 5254) are behind a heat shield capable of removing about 500 watts per square unit, such as inches. All the magnet sets (50, 52, 54) have magnetic orientations substantially perpendicular to the magnet base plate. The magnetic orientation of the center magnet (50) is north up; the second magnet array is south up (52); the third magnet set is south up (54); and the fourth magnet set, it used, is north up. The magnet arrays are easier to assemble and repair and produce a target utilization of at least 30 percent and preferably 40 percent or higher.
机译:具有简化设计的磁控溅射阴极( 21 )提供了极好的靶( 56 )利用率。磁体设计包含三个或四个磁体组( 50、52、54 )。这些磁铁( 50,5254 )位于挡热板的后面,该挡热板能够去除大约每平方英寸500瓦的功率,例如英寸。所有磁体组( 50、52、54 )的磁取向基本垂直于磁体基板。中心磁体( 50 )的磁向为北。第二个磁铁阵列在南方( 52 );第三个磁铁组朝南( 54 );它使用的第四个磁铁组在北方。磁体阵列更易于组装和维修,并且目标利用率至少为30%,最好为40%或更高。

著录项

  • 公开/公告号US2003209431A1

    专利类型

  • 公开/公告日2003-11-13

    原文格式PDF

  • 申请/专利权人 BROWN JEFFREY T.;

    申请/专利号US20020257165

  • 发明设计人 JEFFREY T. BROWN;

    申请日2002-10-09

  • 分类号C23C14/35;

  • 国家 US

  • 入库时间 2022-08-21 23:17:33

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