Reference cell with various load circuits compensating for source side loading effects in a non-volatile memory

摘要

A load circuit for compensating for source side loading effects in a non-volatile memory. Specifically, embodiments of the present invention describe a reference cell that is coupled to a plurality of load circuits. At least one of the plurality of load circuits, an m^th load circuit, comprises a select transistor coupled to m resistors that are coupled in series. The m^th load circuit matches a source side loading effect of a corresponding m^th memory cell located m memory cells away from a source line node on a source line coupling source regions in memory cells of a row of memory cells.