首页> 外国专利> Non-uniform etching of anode foil to produce higher capacitance gain without sacrificing foil strength

Non-uniform etching of anode foil to produce higher capacitance gain without sacrificing foil strength

机译:阳极箔的非均匀蚀刻以在不牺牲箔强度的情况下产生更高的电容增益

摘要

The present invention is directed to a method of etching anode foil in a non-uniform manner which increases the overall capacitance gain of the foil while retaining foil strength. In particular, by using a mask to protect a mesh grid of the foil from further etching, a previously etched foil can be further etched, prior to the widening step. Alternatively, the mask may be used in the initial etch, eliminating the need for the second process. In effect the foil may be etched to a higher degree in select regions, leaving a web of more lightly etched foil defined by the mask to retain strength. According to the present invention, the foil is placed between two masks with a grid of openings which expose the foil in these areas to the etching solution. The exposed area can be as little as 10% of the total foil to as much as 95% of the total foil, preferably 30% to 70% of the total foil area. The pattern is configured in such a way that the enhanced area does not create large scale strength defects such as perforation holes and is held in a pattern such as a hexagonal array, random array or radial burst array, such that the exposed area perimeter can be round, square, hexagonal, or triangular. The higher surface area in the exposed areas does not significantly decrease the strength of the foil as a whole, such that the method according to the present invention increases capacitance of the anode foil without significantly decreasing the strength of the foil.
机译:本发明涉及一种以不均匀的方式蚀刻阳极箔的方法,该方法在保持箔强度的同时增加了箔的总电容增益。特别地,通过使用掩模来保护箔的网格不被进一步蚀刻,在加宽步骤之前,可以进一步蚀刻先前蚀刻的箔。可替代地,可以在初始蚀刻中使用掩模,从而不需要第二工艺。实际上,可以在选定区域中以更高的程度蚀刻箔片,而留下由掩模限定的蚀刻程度更轻的箔网以保持强度。根据本发明,将箔片放置在两个具有开口网格的掩模之间,这些开口将箔片在这些区域中暴露于蚀刻溶液。暴露的面积可以低至总箔面积的10%至高至总箔面积的95%,优选占总箔面积的30%至70%。以这样的方式配置图案,使得增强区域不会产生诸如穿孔的大规模强度缺陷,并且被保持在诸如六边形阵列,随机阵列或放射状爆破阵列的图案中,使得暴露区域的周长可以是圆形,正方形,六边形或三角形。暴露区域中较高的表面积不会显着降低整个箔片的强度,因此根据本发明的方法在不显着降低箔片强度的情况下增加了阳极箔片的电容。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号