Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device

摘要

In a reflection type mask blank for EUV exposure with a substrate, a multilayer film is formed on the substrate so as to reflect an EUV light ray. A light absorber layer is formed on the multilayer film so as to absorb the EUV light ray. The multilayer film has flatness with respect to a surface thereof, and the flatness is 100 nm or less.