首页> 外国专利> ArF excimer laser devices, KrF excimer laser devices and fluorine alser devices

ArF excimer laser devices, KrF excimer laser devices and fluorine alser devices

机译:ArF受激准分子激光设备,KrF受激准分子激光设备和氟激发器设备

摘要

To provide an ArF excimer laser device capable of a pulsewidth FWHM of 20 ns or more, a pulse duration time of 50 ns or more, and a spectrum line width FWHM of 0.35 pm or less, and to provide a KrF excimer laser device and a fluorine laser device with stretched pulse widths. The ArF excimer laser device connects to the output terminal of a magnetic pulse compression circuit and has a pair of laser discharge electrodes located within the laser chamber and a peaking capacitor connected in parallel with the pair of laser discharge electrodes. The output waveform of the laser pulse has a bifurcated form with a front half peak and a later half peak and, if the peak value of the front half peak is P1 and the peak value of the later half peak is P2 and the (proportion of the pulse later half peak)=P2/(P1+P2)×100(%), then the (proportion of the pulse later half peak) is 50% or more.
机译:提供一种能够使脉冲宽度FWHM为20ns以上,脉冲持续时间为50ns以上且谱线宽度FWHM为0.35pm以下的ArF准分子激光装置,并提供KrF准分子激光装置及具有扩展脉冲宽度的氟激光装置。 ArF准分子激光装置连接到磁脉冲压缩电路的输出端子,并且具有位于激光室内的一对激光放电电极和与该对激光放电电极并联连接的峰值电容器。激光脉冲的输出波形为分叉形式,具有前半峰和后半峰,如果前半峰的峰值为P 1 ,而后半峰的峰值为峰值是P 2 和(脉冲后半峰的比例)等于P 2 /(P 1 + P 2 )乘以100(%),则(脉冲后半峰的比例)为50%或更高。

著录项

  • 公开/公告号US6754247B2

    专利类型

  • 公开/公告日2004-06-22

    原文格式PDF

  • 申请/专利权人 USHIODENKI KABUSHIKI KAISHA;

    申请/专利号US20010803983

  • 发明设计人 KOJI KAKIZAKI;AKIFUMI TADA;

    申请日2001-03-13

  • 分类号H01S32/20;

  • 国家 US

  • 入库时间 2022-08-21 23:17:03

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