首页> 外国专利> Multi-bank memory array architecture utilizing topologically non-uniform blocks of sub-arrays and input/output assignments in an integrated circuit memory device

Multi-bank memory array architecture utilizing topologically non-uniform blocks of sub-arrays and input/output assignments in an integrated circuit memory device

机译:多存储体阵列结构,利用集成电路存储设备中子阵列的拓扑不均匀块和输入/输出分配

摘要

A multi-bank memory array architecture utilizing topologically non-uniform blocks of sub-arrays and input/output (“I/O”) assignments in an integrated circuit memory device. By using non-uniform blocks of multiple identical sub-arrays, non-uniform assignments of blocks to banks and/or non-uniform assignments of I/Os to blocks, it is possible to optimize the dimensions of the chip and the placement of the I/Os with respect to the package pads. In this manner, the granularity of the building blocks of sub-arrays is improved while the flexibility in I/O assignment is also improved leading to more efficient and flexible chip layouts.
机译:一种多排存储器阵列结构,其利用集成电路存储设备中子阵列的拓扑上不均匀的块和输入/输出(“ I / O”)分配。通过使用多个相同子阵列的不均匀块,对块的不均匀分配和/或对块的I / O的不均匀分配,可以优化芯片的尺寸和布局。相对于封装焊盘的I / O。以这种方式,改善了子阵列构建块的粒度,同时还改善了I / O分配的灵活性,从而导致了更高效,更灵活的芯片布局。

著录项

  • 公开/公告号US6741488B1

    专利类型

  • 公开/公告日2004-05-25

    原文格式PDF

  • 申请/专利权人 PROMOS TECHNOLOGIES INC.;

    申请/专利号US20020299738

  • 发明设计人 JON ALLAN FAUE;JOHN HEIGHTLEY;

    申请日2002-11-19

  • 分类号G11C50/60;

  • 国家 US

  • 入库时间 2022-08-21 23:16:22

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